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2SC3645 - Kexin

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2SC3645 Transistor

SMD Type High-Voltage Switching Applications 2SC3645 Transistors Features Adoption of FBET Process High Breakdown Voltage (VCEO = 160V) Excellent Linearlity of hFE and Small Cob Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) C.

Features

Adoption of FBET Process High Breakdown Voltage (VCEO = 160V) Excellent Linearlity of hFE and Small Cob Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range
* Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC
* Tj Tstg Rating 180 160 5 140 200 500 1.3 150 -55 to +150 Unit V V V mA mA mW W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emit.

The same part from a different manufacturer

Datasheet 2SC3645 - ON Semiconductor 2SC3645

2SA1415 / 2SC3645 Ordering number : EN1720B 2SA1415 / 2SC3645 PNP / NPN Epitaxial Planar Silicon Transistors High-Vol.

Datasheet 2SC3645 - Sanyo Semicon Device 2SC3645

Ordering number:ENN1720A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1415/2SC3645 High-Voltage Switching, Predriver.

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