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Ordering number:EN1628C NPN Triple Diffused Planar Silicon Transistor 2SC3644 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP process). · High speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3644] Specifications Absolute Maximum Rati.
· High reliability (Adoption of HVP process).
· High speed.
· High breakdown voltage.
· Adoption of MBIT process.
Package Dimensions
unit:mm 2022A
[2SC3644]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector-to-Emitter Sastain V.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3640 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2SC3642 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 3 | 2SC3642 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3643 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 5 | 2SC3645 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SC3645 |
Kexin |
Transistor |
|
| 7 | 2SC3645 |
ON Semiconductor |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SC3646 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SC3646 |
Kexin |
Transistor |
|
| 10 | 2SC3646 |
ON Semiconductor |
Bipolar Transistor |
|
| 11 | 2SC3647 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistor |
|
| 12 | 2SC3647 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|