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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Speed ·High reliability ·Adoption of MBIT process ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collecto.
r-Base Breakdown Voltage IC= 1mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A ICBO Collector Cutoff Current VCB= 1200V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE-1 DC Current Gain IC= 1.2A ; VCE= 5V 2SC3640 MIN TYP. MAX UNIT 800 V 1200 V 5 V 1.5 V 100 μA 1 mA 8 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our produc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3642 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SC3642 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC3643 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 4 | 2SC3644 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 5 | 2SC3645 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SC3645 |
Kexin |
Transistor |
|
| 7 | 2SC3645 |
ON Semiconductor |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SC3646 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SC3646 |
Kexin |
Transistor |
|
| 10 | 2SC3646 |
ON Semiconductor |
Bipolar Transistor |
|
| 11 | 2SC3647 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistor |
|
| 12 | 2SC3647 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|