SMD Type Transistors NPN Transistors 2SC3606 ■ Features ● Collector Current Capability IC=80mA ● Collector Emitter Voltage VCEO=12V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Coll.
● Collector Current Capability IC=80mA
● Collector Emitter Voltage VCEO=12V
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1 +0.05
-0.01
+0.10.97 -0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IB PC TJ Tstg
Rating 20 12 3 80 40 150 125
-55 to 125
■ Electrical Characteristics Ta = 25℃
Parameter C.
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3606 2SC3606 VHF~UHF Band Low Noise Amplifier Applications Un.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3600 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
2 | 2SC3601 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors | |
3 | 2SC3603 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR | |
4 | 2SC3604 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR | |
5 | 2SC3604 |
New Jersey Semi-Conductor |
NPN EPITAXIAL SILICON TRANSISTOR | |
6 | 2SC3605 |
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor | |
7 | 2SC3607 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
8 | 2SC3608 |
ETC |
Transistor | |
9 | 2SC3611 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
10 | 2SC3613 |
Toshiba Semiconductor |
NPN Transistor | |
11 | 2SC3615 |
NEC |
NPN SILICON TRANSISTOR | |
12 | 2SC3616 |
NEC |
NPN SILICON TRANSISTOR |