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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3605 2SC3605 VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS FEATURES: l Low Noise Figure, High Gain l NF = 1.1dB, |S21e|2 = 10dB (f = 1GHz) Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Colle.
l Low Noise Figure, High Gain l NF = 1.1dB, |S21e|2 = 10dB (f = 1GHz) Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 20 12 3 80 40 600 150 −55~150 UNIT V V V mA mA mW °C °C MICROWAVE CHARACTERISTICS (Ta = 25°C) JEDEC EIAJ TOSHIBA Weight: 0.21g TO−92 SC−43 2−5F1E CHARACTERISTIC Transition Frequency Insertion Gain Noise Figure SYMBOL TEST CONDITION MIN fT .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3600 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC3601 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SC3603 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 4 | 2SC3604 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 5 | 2SC3604 |
New Jersey Semi-Conductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 6 | 2SC3606 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC3606 |
Kexin |
NPN Transistors |
|
| 8 | 2SC3607 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC3608 |
ETC |
Transistor |
|
| 10 | 2SC3611 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SC3613 |
Toshiba Semiconductor |
NPN Transistor |
|
| 12 | 2SC3615 |
NEC |
NPN SILICON TRANSISTOR |
|