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2SC3606 |
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| Part Number | 2SC3606 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3606 2SC3606 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) ... |
| Features |
lectrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse transfer capacitance
ICBO IEBO hFE Cob Cre
VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1 MHz (Note)
¾ ¾ 30 ¾ ¾
¾ 1 mA ¾ 1 mA ¾ 250 1.0 ¾ pF 0.7 1.15 pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-19
Marking
2SC3606
2 2003-03-19
2SC3606
3 2003-03-19
2SC3606
4 2003-03-19
2SC3606
5 2003-03-19
2SC3606
6 2003-03-19... |
| Document |
 2SC3606 Data Sheet
PDF 235.97KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3600 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC3601 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SC3603 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 4 | 2SC3604 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 5 | 2SC3604 |
New Jersey Semi-Conductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|