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2SC3605 |
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| Part Number | 2SC3605 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3605 2SC3605 VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS FEATURES: l Low Noise Figure, High Gain l NF = 1.1dB, |S21e|2 = 10dB (f = 1GHz) Un... |
| Features |
l Low Noise Figure, High Gain l NF = 1.1dB, |S21e|2 = 10dB (f = 1GHz)
Unit in mm
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL
VCBO VCEO VEBO
IC IB PC Tj Tstg
RATING
20 12 3 80 40 600 150 −55~150
UNIT
V V V mA mA mW °C °C
MICROWAVE CHARACTERISTICS (Ta = 25°C)
JEDEC EIAJ TOSHIBA Weight: 0.21g
TO−92 SC−43 2−5F1E
CHARACTERISTIC Transition Frequency Insertion Gain
Noise Figure
SYMBOL
TEST CONDITION
MIN
fT ... |
| Document |
 2SC3605 Data Sheet
PDF 237.97KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3600 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC3601 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SC3603 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 4 | 2SC3604 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 5 | 2SC3604 |
New Jersey Semi-Conductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|