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SEMICONDUCTOR 2SC3519B Series Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386B) 15A/160V, 180V/130W RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0 20.0 min 4.0 max TO-3P(B) FEATURES Recommend for 105W high Fiderity audio frequency amplifier output stage Complement to type 2SA1386B & 2SA1386B-A 2 3 +0.2 1.05 -0.1 5.45±0.1 C .
Recommend for 105W high Fiderity audio frequency amplifier output stage Complement to type 2SA1386B & 2SA1386B-A 2 3 +0.2 1.05 -0.1 5.45±0.1 C E +0.2 0.65 -0.1 5.45±0.1 B 1.8 15.6±0.4 9.6 5 . 0 ±0 . 2 4.8±0.2 2.0±0.1 Φ 3.2 ± 0,1 1.4 C 1 2 3 B APPLICATIONS Audio and general purpose E NPN All dimensions in millimeters ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) VALUE SYMBOL VCBO V CEO V EBO I CP (I CM ) IC IB PC Tj T stg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3519 |
Sanken electric |
Silicon NPN Transistor |
|
| 2 | 2SC3519 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3519 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3519A |
Sanken |
Silicon NPN Epitaxial Planar Transistor |
|
| 5 | 2SC3519A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC3519A |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC3510 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC3512 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC3512 |
Renesas |
Silicon NPN Transistor |
|
| 10 | 2SC3512 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 11 | 2SC3513 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC3513 |
Kexin |
Silicon NPN Epitaxial Transistor |
|