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·Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A ·Good Linearity of hFE ·Complement to Type 2SA1386/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SC.
Collector-Emitter Breakdown Voltage 2SC3519 2SC3519A IC= 25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A ICBO Collector Cutoff Current 2SC3519 VCB= 160V; IE= 0 2SC3519A VCB= 180V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 5A ; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz fT Current-Gain—Bandwidth Product IE= -2A ; VCE= 12V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= 10A ,RL= 4Ω, IB1= -IB2= 1A,VCC= 40V MIN TYP. MAX UNIT 160 V 180 2.0 V 100 μA 100 100 μA 50 180 2.
2SC3519A - SavantIC
·With TO-3PN package ·Complement to type 2SA1386/A APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collec.
2SC3519A - Sanken
The 2SC3519A is an NPN transistor of 180 V, 15 A. The product has constant hFE characteristics in a wide current range, .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3519 |
Sanken electric |
Silicon NPN Transistor |
|
| 2 | 2SC3519 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3519 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3519B |
NELL SEMICONDUCTOR |
Silicon NPN Transistor |
|
| 5 | 2SC3510 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC3512 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC3512 |
Renesas |
Silicon NPN Transistor |
|
| 8 | 2SC3512 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 9 | 2SC3513 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SC3513 |
Kexin |
Silicon NPN Epitaxial Transistor |
|
| 11 | 2SC3514 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 12 | 2SC3515 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|