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SMD Type Silicon NPN Epitaxial 2SC3513 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 Features +0.1 1.3-0.1 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Co.
+0.1 1.3-0.1 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 15 11 2 500 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector cutoff current Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth.
2SC3513 - Hitachi Semiconductor
2SC3513 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Col.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3510 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3512 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3512 |
Renesas |
Silicon NPN Transistor |
|
| 4 | 2SC3512 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 5 | 2SC3514 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | 2SC3515 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC3515 |
Kexin |
Transistor |
|
| 8 | 2SC3518 |
INCHANGE |
NPN Power Transistor |
|
| 9 | 2SC3518 |
Renesas |
Silicon Power Transistors |
|
| 10 | 2SC3518-Z |
NEC |
NPN Transistor |
|
| 11 | 2SC3518-Z |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 12 | 2SC3518-Z |
Kexin |
NPN Transistor |
|