Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 60 V Emitter to.
• High DC Current Gain hFE = 100 to 400
• Low VCE(sat): VCE(sat) = 0.09 V TYP.
• Complement to 2SA1385-Z
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
7
V
Collector Current (DC)
IC(DC)
5
A
Collector Current (pulse) Note 1
IC(pulse)
7
A
Total Power Dissipation (TA = 25°C) Note 2 PT
2.0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150 °C
2SC3518 - INCHANGE
·Low collector saturation voltage ·High DC current gain ·Minimum Lot-to-Lot variations for robust device performance and.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3510 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3512 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3512 |
Renesas |
Silicon NPN Transistor |
|
| 4 | 2SC3512 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 5 | 2SC3513 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC3513 |
Kexin |
Silicon NPN Epitaxial Transistor |
|
| 7 | 2SC3514 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | 2SC3515 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC3515 |
Kexin |
Transistor |
|
| 10 | 2SC3518-Z |
NEC |
NPN Transistor |
|
| 11 | 2SC3518-Z |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 12 | 2SC3518-Z |
Kexin |
NPN Transistor |
|