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2SC3518 |
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| Part Number | 2SC3518 |
| Manufacturer | INCHANGE |
| Description | ·Low collector saturation voltage ·High DC current gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This transistor is ideal for audio frequency ... |
| Features |
er Saturation Voltage IC= 2A; IB= 200mA
VBE(sat)NOTE Base-Emitter Saturation Voltage
IC= 2A; IB= 200mA
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1NOTE
DC Current Gain
IC= 5A; VCE= 1V
hFE-2NOTE
DC Current Gain
IC= 2A; VCE= 1V
fTNOTE
Current-Gain—Bandwidth Product
NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse
IC= 500mA; VCE= 10V
hFE-2 Classifications M L K 100-200 160-320 200-400 2SC3518 MIN TYP. MAX UNIT 0.3 V 1.2 V 10 μA 10 μA 50 100 400 120 MHz NOTICE： ISC reserves the rights to make changes of the conte... |
| Document |
 2SC3518 Data Sheet
PDF 237.73KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3510 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3512 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3512 |
Renesas |
Silicon NPN Transistor |
|
| 4 | 2SC3512 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 5 | 2SC3513 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|