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2SC3513 |
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| Part Number | 2SC3513 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC3513 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC3513 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base volt... |
| Features |
B = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz
2
2SC3513
Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 Collector Current IC (mA) 20 180 160 140 120 12 100 80 8 60 40 4 IB = 20 µA
16
100
50
0
50 100 150 Ambient Temperature Ta (°C)
0
2 4 6 8 10 Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current 200 Gain Bandwidth Product fT (GHz) DC Current Transfer Ratio hFE Pulse VCE = 5 V 160 10
Gain Bandwidth Product vs. Collector Cur... |
| Document |
 2SC3513 Data Sheet
PDF 28.95KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3510 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3512 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3512 |
Renesas |
Silicon NPN Transistor |
|
| 4 | 2SC3512 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 5 | 2SC3513 |
Kexin |
Silicon NPN Epitaxial Transistor |
|