2SC3506 Silicon NPN Transistor Datasheet

2SC3506 Silicon NPN Transistor

Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm 15.0±0.3 5.0±0.2 (0.7) ■ Features 11.0±0.2 (3.2) • High-speed switching 21.0±0.5 15.0±0.2 • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be.

Features

11.0±0.2 (3.2)
• High-speed switching 21.0±0.5 15.0±0.2
• High collector-base voltage (Emitter open) VCBO φ 3.2±0.1
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 2.0±0.1
■ Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.6±0.2 / Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip e Collector-base voltage (Emitter open) VCBO 1 000 V c type) Collector-emitter voltage (E-B short) VCES 1 000 V n d ge. ed Collector-emitter voltage (Base open) VCEO 800 V le sta ntinu Emitter-.

The same part from a different manufacturer

2SC3506 - SavantIC

·With TO-3PFa package ·High-speed switching ·High collector-base voltage VCBO ·Satisfactory linearity of forward current.

2SC3506 - INCHANGE

·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed APPLICATIONS ·Designed for switchi.

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2SC3506 - Panasonic Semiconductor