·With TO-3PN package ·High voltage ,high reliability ·High speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL .
ors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IC=2A ;IB=0.4A IC=2A ;IB=0.4A VCB=900V; IE=0 VEB=10V; IC=0 IC=2A ; VCE=5V 10 MIN 700 900 2SC3505 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V 0.5 1.2 1.0 1.0 V V mA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=3A;IB1=0.6A;IB2=-1.2A RL=1.
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 700V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3500 |
ETC |
Silicon Power Transistor | |
2 | 2SC3501 |
ETC |
Silicon Power Transistor | |
3 | 2SC3502 |
Sanyo Semicon Device |
PNP/NPN Transistors | |
4 | 2SC3502 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
5 | 2SC3502 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | 2SC3503 |
Sanyo Semicon Device |
PNP/NPN Transistors | |
7 | 2SC3503 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
8 | 2SC3504 |
Sanyo Semicon Device |
NPN Transistor | |
9 | 2SC3506 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
10 | 2SC3506 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC3506 |
INCHANGE |
NPN Transistor | |
12 | 2SC3507 |
Panasonic Semiconductor |
Silicon NPN Transistor |