2SC3502 Silicon NPN Power Transistor Datasheet

2SC3502 Silicon NPN Power Transistor

·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 200 V ·Complement to Type 2SA1380 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for ultrahigh-definition CRT display, video out- put applicaitons ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 .

Features

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ;IB= 2mA VBE(sat) Base-Emitter Saturation Voltage IC= 20mA ;IB= 2mA ICBO Collector Cutoff Current VCB= 150V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 10m A ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 30V; COB Collector Capacitance IE= 0; VCB= 30V;ftest = 1MHz  hFE Classifications C D E F 40-80 60-120 100-200 160-320 MIN TYP. MAX UNIT 200 V 200 V.

The same part from a different manufacturer

2SC3502 - Sanyo Semicon Device

Ordering number:ENN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display,.

2SC3502 - BLUE ROCKET ELECTRONICS

TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package. / Features ,,。 High breakdown voltage, small r.

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2SC3502 - Inchange Semiconductor