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2SC3420 - Toshiba Semiconductor

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2SC3420 Silicon NPN Transistor

2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • • • High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) High collector power dissipatio.

Features

pplication of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 Datasheet pdf - http://www.DataSheet4U.net.

The same part from a different manufacturer

Datasheet 2SC3420 - SavantIC 2SC3420

·With TO-126 package ·High DC current gain ·Low saturation voltage ·High collector power dissipation APPLICATIONS ·Storo.

Datasheet 2SC3420 - INCHANGE 2SC3420

·High Collector Current-IC= 5.0A ·DC Current Gain- : hFE= 70(Min)@IC= 4A ·Low Saturation Voltage : VCE(sat)= 1.0V(Max)@I.

Datasheet 2SC3420 - JCET 2SC3420

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SC3420 TRANSISTOR (NPN) TO.

Datasheet 2SC3420 - BLUE ROCKET ELECTRONICS 2SC3420

TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.  / Features ,, 。 High DC current gain, low satu.

Datasheet 2SC3420 - GME 2SC3420

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD FEATURES z High DC Current Gain: hFE=140~600(VCE=2V,IC=0.5A) Pb Lead.

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