2SC3423 - INCHANGE

2SC3423 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Complement to Type 2SA1360 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-E.

Features

aturation Voltage IC= 10mA; IB= 1mA VBE(on) Base-Emitter On Voltage IC= 10mA; VCE= 5V ICBO Collector Cutoff Current VCB= 150V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 10mA; VCE= 5V fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 2SC3423 MIN TYP. MAX UNIT 150 V 1.0 V 0.8 V 0.1 μA 0.1 μA 80 240 200 MHz 1.8 pF  hFE Classifications O Y 80-160 120-240 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The .