·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V (Min) ·Complement to Type 2SA1361 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Vo.
ration Voltage IC= 10mA; IB= 1mA VBE(on) Base-Emitter On Voltage IC= 25mA; VCE= 20V ICBO Collector Cutoff Current VCB= 200V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 25mA; VCE= 20V fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 10V 2SC3424 MIN TYP. MAX UNIT 250 V 1.5 V 0.75 V 1.0 μA 1.0 μA 50 80 MHz Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are in.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3420 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
2 | 2SC3420 |
INCHANGE |
NPN Transistor | |
3 | 2SC3420 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SC3420 |
JCET |
NPN Transistor | |
5 | 2SC3420 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
6 | 2SC3420 |
GME |
NPN Transistor | |
7 | 2SC3421 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
8 | 2SC3421 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
9 | 2SC3421 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
10 | 2SC3421 |
JCET |
NPN Transistor | |
11 | 2SC3422 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
12 | 2SC3422 |
Inchange Semiconductor |
Silicon NPN Power Transistor |