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Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features · Adoption of FBET process. · High breakdown voltage : VCEO=(–)50V. · Large current capacitiy and high fT. · Very small-sized package permitting sets to be small- sized, slim. Package Dimensions unit:mm 2018A [2SA1338/2SC3392] S.
· Adoption of FBET process.
· High breakdown voltage : VCEO=(
–)50V.
· Large current capacitiy and high fT.
· Very small-sized package permitting sets to be small-
sized, slim.
Package Dimensions
unit:mm 2018A
[2SA1338/2SC3392]
Switching Time Test Circuit
( ) : 2SA1338
(For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F)
Specifications
C : Collector B : Base E : Emitter
SANYO : CP
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissip.
2SC3392 - Kexin
SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistors 2SC3392 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Fe.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3390 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Transistor |
|
| 2 | 2SC3391 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor |
|
| 3 | 2SC3393 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SC3395 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SC3396 |
Sanyo |
SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 6 | 2SC3397 |
Sanyo |
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 7 | 2SC3398 |
Sanyo |
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 8 | 2SC3399 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SC3300 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC3300 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SC3301 |
Toshiba |
Silicon NPN Transistor |
|
| 12 | 2SC3302 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|