2SC3391 - Hitachi Semiconductor

2SC3391 Silicon NPN Epitaxial Planar Transistor

2SC3391 Silicon NPN Epitaxial Planar Application VHF amplifier, Mixer, Local oscillator Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3391 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature .

Features

5 Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 6 V, IC = 1 mA V V MHz pF dB dB VCE = 6 V, IC = 1 mA I C = 20 mA, IB = 4 mA VCE = 6 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 1 mA, f = 100 MHz VCE = 6 V, IC = 1 mA, Rg = 50 Ω, f = 100 MHz 1. The 2SC3391 is grouped by h FE as follows. C 100 to 200 See characteristic curves of 2SC535. 2 2SC3391 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 200 100 0 50 100 Ambient Temperature Ta (°C) 150 3 4.2 Max 1.8 Max 3.2 Max 2.2 .