2SC3392 |
Part Number | 2SC3392 |
Manufacturer | Kexin |
Description | SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistors 2SC3392 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 Adoption of FBET process. High breakdown voltage : VCEO=50V... |
Features |
+0.1 2.4-0.1
Adoption of FBET process. High breakdown voltage : VCEO=50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 500 800 200 150 -55 to +1... |
Document |
2SC3392 Data Sheet
PDF 56.05KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3390 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Transistor | |
2 | 2SC3391 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor | |
3 | 2SC3392 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | 2SC3393 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
5 | 2SC3395 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |