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2SC3356 - Inchange Semiconductor

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2SC3356 Silicon NPN Transistor

·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .

Features

BO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V Cre Feed-Back Capacitance ︱S21e︱2 Insertion Power Gain IE= 0 ; VCB= 10V;f= 1.0MHz IC= 20mA ; VCE= 10V;f= 1.0GHz NF Noise Figure IC= 7mA ; VCE= 10V;f= 1.0GHz MIN TYP. MAX UNIT 1.0 μA 1.0 μA 50 300 7 GHz 0.55 1.0 pF 11.5 dB 1.1 2.0 dB  hFE Classification Class Q R S Marking R23 R24 R25 hFE 50-100 80-160 125-250 isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor 2SC3356 isc webs.

The same part from a different manufacturer

Datasheet 2SC3356 - Kexin 2SC3356

SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1.

Datasheet 2SC3356 - UTC 2SC3356

The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD back.

Datasheet 2SC3356 - SeCoS 2SC3356

Elektronische Bauelemente 2SC3356 NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” .

Datasheet 2SC3356 - Renesas 2SC3356

Summary Previous No. :PU10209EJ02V0DS Modification of ORDERING INFORMATION Modification of hFE CLASSIFICATION All trade.

Datasheet 2SC3356 - NEC 2SC3356

The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dy.

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