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·With TO-220Fa package ·High voltage ·High speed switching APPLICATIONS ·For high speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Co.
llector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V 15 8 MIN 500 2SC3352 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 1.0 1.5 0.1 0.1 V V mA mA 2.5 MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=1A; IB1=-IB2=0.2A VCC=200V 1.0 3.0 1.0 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLI.
2SC3352 - INCHANGE
· ·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V.
2SC3352 - Panasonic
2SC3352, 2SC3352A して、として、いますを s q q q q s s *VCEO(sus) (TC=25˚C) 2SC3352A 2SC3352A TC=25°C Ta=25°C VCBO VCEO VEBO I.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3352A |
Panasonic |
NPN Transistor |
|
| 2 | 2SC3353 |
Inchange Semiconductor |
Power Transistor |
|
| 3 | 2SC3353 |
Panasonic |
Silicon NPN Transistor |
|
| 4 | 2SC3353A |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC3353A |
Panasonic |
Silicon NPN Transistor |
|
| 6 | 2SC3354 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC3355 |
NEC |
NPN Silicon Transistor |
|
| 8 | 2SC3355 |
UTC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 9 | 2SC3355 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 10 | 2SC3355 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 11 | 2SC3356 |
NEC |
NPN Silicon Transistor |
|
| 12 | 2SC3356 |
UTC |
NPN SILICON TRANSISTOR |
|