Transistors 2SC3354 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 4.0±0.2 2.0±0.2 15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6 ■ Features • Optimum for high-density mounting • Allowing supply with the radial taping 0.75 max. • High transition frequency fT / ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol.
• Optimum for high-density mounting
• Allowing supply with the radial taping
0.75 max.
• High transition frequency fT
/
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
V
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
V
a e cle con Collector current
IC
50
mA
lifecy , dis Collector power dissipation
PC
300
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
0.45+
–00..1200
(2..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3352 |
INCHANGE |
NPN Transistor | |
2 | 2SC3352 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC3352 |
Panasonic |
NPN Transistor | |
4 | 2SC3352A |
Panasonic |
NPN Transistor | |
5 | 2SC3353 |
Inchange Semiconductor |
Power Transistor | |
6 | 2SC3353 |
Panasonic |
Silicon NPN Transistor | |
7 | 2SC3353A |
INCHANGE |
NPN Transistor | |
8 | 2SC3353A |
Panasonic |
Silicon NPN Transistor | |
9 | 2SC3355 |
NEC |
NPN Silicon Transistor | |
10 | 2SC3355 |
UTC |
NPN SILICON EPITAXIAL TRANSISTOR | |
11 | 2SC3355 |
Inchange Semiconductor |
Silicon NPN RF Transistor | |
12 | 2SC3355 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |