2SC3229 - INCHANGE

2SC3229 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, lighting inverter and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB.

Features

Breakdown Voltage IC= 20mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA ICBO Collector Cutoff Current VCB= 240V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 10V hFE-2 DC Current Gain IC= 20mA; VCE= 10V COB Output Capacitance IE= 0; VCB= 20V; f= 1MHz fT Current-Gain—Bandwidth Product IE= -20mA; VCE= 20V MIN TYP. MAX UNIT 300 V 1.0 V 100 μA 100 μA 20 30 200 4 pF 75 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The infor.