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2SC3229 |
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| Part Number | 2SC3229 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO... |
| Features |
Breakdown Voltage IC= 20mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA
ICBO
Collector Cutoff Current
VCB= 240V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 10V
hFE-2
DC Current Gain
IC= 20mA; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 20V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IE= -20mA; VCE= 20V
MIN TYP. MAX UNIT
300
V
1.0
V
100 μA
100 μA
20
30
200
4
pF
75
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The infor... |
| Document |
 2SC3229 Data Sheet
PDF 176.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3220 |
Shindengen Electric Mfg.Co.Ltd |
High Voltage Ultra High Speed Switching Transistors |
|
| 2 | 2SC3220 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3221 |
Shindengen Electric Mfg.Co.Ltd |
High Voltage Ultra High Speed Switching Transistors |
|
| 4 | 2SC3222 |
Shindengen Electric Mfg.Co.Ltd |
High Voltage Ultra High Speed Switching Transistors |
|
| 5 | 2SC3223 |
INCHANGE |
NPN Transistor |
|