2SC3225 - Toshiba Semiconductor

2SC3225 Silicon NPN TRANSISTOR

2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Switching Applications Solenoid Drive Applications Industrial Applications Unit: mm • High DC current gain: hFE = 500 (min) (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Colle.

Features

CEO hFE VCE (sat) VBE (sat) fT Cob VCB = 40 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 400 mA IC = 300 mA, IB = 1 mA IC = 300 mA, IB = 1 mA VCB = 2 V, IC = 100 mA VCB = 10 V, IB = 0, f = 1 MHz Min Typ. Max Unit ― ― 10 µA ― ― 1 µA 40 ― ― V 500 ― ― ― 0.3 0.5 V ― ― 1.1 V ― 220 ― MHz ― 20 ― pF Turn-on time Switching time Storage time Fall time ton 20 µs Input IB1 Output ― 1.0 ― IB1 IB2 100 Ω tstg IB2 VCC = 30 V tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1% ― 3.0 ― µs ― 1.2 ― 1 2004-07-26 Marking C3225 Part No. (or abbreviation code) Lot No. A line indicates lead.