·With TO-3PFa package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SC3212 VCBO Collector-base voltage 2SC3212A VCEO VEBO IC ICM IB Collector-emitter voltage Emitter-base voltage Col.
mitter saturation voltage 2SC3212 2SC3212A CONDITIONS IC=0.2A;L=25mH IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V; IE=0 100 VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 15 8 3.5 MHz 100 µA µA MIN 500 1.0 1.5 TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat ICBO Collector cut-off current IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency Switching times 2SC3212 ton Turn-on time 2SC3212A tstg Storage time 2SC3212 tf Fall time 2SC3212A 1.2 IC=5A; VCC=200V IB1=-IB2=1A 1.2 2.5 1.0 µs µs 1.0 µs 2 SavantIC Semicondu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3212 |
INCHANGE |
NPN Transistor | |
2 | 2SC3212 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC3210 |
INCHANGE |
NPN Transistor | |
4 | 2SC3210 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC3210 |
Panasonic |
Silicon NPN Transistor | |
6 | 2SC3211 |
INCHANGE |
NPN Transistor | |
7 | 2SC3211 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC3211A |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SC3214 |
INCHANGE |
NPN Transistor | |
10 | 2SC3214 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC3218-M |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
12 | 2SC3219 |
Shindengen Electric Mfg.Co.Ltd |
High Voltage Ultra High Speed Switching Transistors |