·With TO-3PFa package ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector cur.
cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;L=25mH IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 MIN 500 2SC3211A SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 1.0 1.5 0.1 0.1 V V mA mA 3 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=3A; IB1=-IB2=0.6A VCC=200V 1.2 3.0 1.2 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3211A Fig.2 outline d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3211 |
INCHANGE |
NPN Transistor | |
2 | 2SC3211 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC3210 |
INCHANGE |
NPN Transistor | |
4 | 2SC3210 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC3210 |
Panasonic |
Silicon NPN Transistor | |
6 | 2SC3212 |
INCHANGE |
NPN Transistor | |
7 | 2SC3212 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC3212A |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SC3214 |
INCHANGE |
NPN Transistor | |
10 | 2SC3214 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC3218-M |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
12 | 2SC3219 |
Shindengen Electric Mfg.Co.Ltd |
High Voltage Ultra High Speed Switching Transistors |