2SC3210 - INCHANGE

2SC3210 NPN Transistor

· ·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 5A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER.

Features

R CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 5V hFE-2 DC Current Gain IC= 5A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V Switching Times; Resistive Load ton Turn-on Time ts Storage Time tf Fall Time IC= 5A; IB1= -IB2= 1A; VCC= 100V 2SC3210 MIN TYP. MAX UNIT 400 V 1.0 V 1.5 .