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2SC3179 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3179 80 60 6 4 1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2.5 B C E Application : Audio and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT.
) (V ) 4
00 m A
80m A
V CE ( sa t )
– I B Characteristics (Typical)
I C
– V BE Temperature Characteristics (Typical)
4 (V CE =4V)
IB
=1
60mA
Collector Current I C (A)
40mA 30mA
2
20mA
Collector Current I C (A)
3
1.0
3
2
p) em
) mp Te se C(
eT
(C
12
25˚
I C =1 A
0
0
1
2
3
4
0 0.005 0.01
0.05
0.1
0.5
1
0 0.4
0.6
0.8
–30
˚C
2A
5˚C
1
10mA
1
(Ca
Ca
3A
as
se
Te
0.5
mp
)
1.0
1.2
Collector-Emitter Voltage V C E (V)
Base Current I B (A)
Base-Emittor Voltage V B E (V)
(V C E =4V) 500 D C Cur r ent Gai n h F E DC C urrent G ain h FE 200 125˚C 100 25˚.
2SC3179 - SavantIC
·With TO-220 package ·Complement to type 2SA1262 ·Low collector saturation voltage APPLICATIONS ·Audio and general purpo.
2SC3179 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max.)@IC=.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3170 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC3170 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3171 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3171 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC3172 |
Toshiba |
Silicon NPN Transistor |
|
| 6 | 2SC3173 |
Sanyo Semicon Device |
NPN Transistor |
|
| 7 | 2SC3174 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 8 | 2SC3175 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC3176 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 10 | 2SC3177 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC3178 |
ETC |
NPN Transistor |
|
| 12 | 2SC3178 |
Fujitsu Media Devices |
(2SC3178 / 2SC3059 - 2SC3061) Silicon High Speed Power Transistor |
|