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SILICON NPN EPITAXIAL PLANAR TYPE TV VHF MIXER APPLICATIONS. FEATURES . High Conversion Gain : G ce=26dB (Typ.) . Low Reverse Transfer Capacitance : C re=0.4pF (Typ.) 2SC3172 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ju.
. High Conversion Gain : G ce=26dB (Typ.) . Low Reverse Transfer Capacitance : C re=0.4pF (Typ.) 2SC3172 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC -stg RATING 30 20 50 25 200 125 -55-125 UNIT 4.2 MAX. d 1. BASE mA 2. EMITTER mA 3. COLLECTOR 4. EMITTER mW °C TOSHIBA Weight : 0.08g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3170 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC3170 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3171 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3171 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC3173 |
Sanyo Semicon Device |
NPN Transistor |
|
| 6 | 2SC3174 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 7 | 2SC3175 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC3176 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 9 | 2SC3177 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC3178 |
ETC |
NPN Transistor |
|
| 11 | 2SC3178 |
Fujitsu Media Devices |
(2SC3178 / 2SC3059 - 2SC3061) Silicon High Speed Power Transistor |
|
| 12 | 2SC3179 |
Sanken electric |
Silicon NPN Transistor |
|