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·With TO-220Fa package ·Low collector saturation voltage ·High breakdown voltge APPLICATIONS ·For high speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector cur.
current gain DC current gain Transition frequency CONDITIONS IC=0.2A , L=25mH IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 8 MIN 400 2SC3170 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 1.0 1.5 100 100 V V µA µA MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=3A ; IB1=-IB2=0.6A VCC=100V 1.0 3.0 1.0 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3170 Fig.2 Outline dimensions (unindicate.
2SC3170 - INCHANGE
·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3171 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC3171 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3172 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SC3173 |
Sanyo Semicon Device |
NPN Transistor |
|
| 5 | 2SC3174 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 6 | 2SC3175 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC3176 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 8 | 2SC3177 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC3178 |
ETC |
NPN Transistor |
|
| 10 | 2SC3178 |
Fujitsu Media Devices |
(2SC3178 / 2SC3059 - 2SC3061) Silicon High Speed Power Transistor |
|
| 11 | 2SC3179 |
Sanken electric |
Silicon NPN Transistor |
|
| 12 | 2SC3179 |
INCHANGE |
NPN Transistor |
|