Ordering number:ENN1058D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1258/2SC3144 60V/3A for High-Speed Drivers Applications Features · High fT. · High switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SA1258/2SC3144] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 ( ) : 2SA1258 Specifications Absolute Maxi.
· High fT.
· High switching speed.
· Wide ASO.
Package Dimensions
unit:mm
2010C
[2SA1258/2SC3144]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
2.7 14.0
( ) : 2SA1258
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitt.
·With TO-220C package ·High switching speed ·High DC current gain ·Wide area of safe operation ·Complement to type 2SA12.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 1.5A ·Wide Area o.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3142 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
2 | 2SC3142 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
3 | 2SC3142 |
Kexin |
NPN Transistors | |
4 | 2SC3143 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
5 | 2SC3143 |
Kexin |
NPN Epitaxial Planar Silicon Transistor | |
6 | 2SC3145 |
Sanyo Semicon Device |
PNP/NPN Transistors | |
7 | 2SC3146 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC3146 |
INCHANGE |
NPN Transistor | |
9 | 2SC3147 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
10 | 2SC3147 |
HGSemi |
Silicon NPN POWER TRANSISTOR | |
11 | 2SC3148 |
Toshiba Semiconductor |
NPN Transistor | |
12 | 2SC3148 |
SavantIC |
SILICON POWER TRANSISTOR |