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2SC3144 |
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| Part Number | 2SC3144 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 1.5A ·Wide Area of Safe Operation ·Complement to Type 2SA1258 ·Minimum Lot-to-Lot variations for ... |
| Features |
NS
V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; RBE= ∞
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 3mA
ICBO
Collector Cutoff Current
VCB= 40V; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE
DC Current Gain
IC= 1.5A; VCE= 2V
fT
Current-Gain—Bandwidth Product IC= -1.5A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 1A , IB1= -IB2= 2mA RL= 20Ω; VCC≈ 20V
2SC3144
MIN TYP. MAX UNIT
70
V
60
V
1.... |
| Document |
 2SC3144 Data Sheet
PDF 192.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3142 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 2 | 2SC3142 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 3 | 2SC3142 |
Kexin |
NPN Transistors |
|
| 4 | 2SC3143 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SC3143 |
Kexin |
NPN Epitaxial Planar Silicon Transistor |
|