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Ordering number:EN1066A NPN Epitaxial Planar Silicon Transistor 2SC3142 High-Frequency General-Purpose Amplifier Applications Features · FBET series. · Compact package enabling compactness of sets. · High fT and small cre (fT=750MHz typ, cre=0.6 typ). Package Dimensions unit:mm 2018A [2SC3142] Specifications Absolute Maximum Ratings at Ta = 25˚C Parame.
· FBET series.
· Compact package enabling compactness of sets.
· High fT and small cre (fT=750MHz typ, cre=0.6 typ).
Package Dimensions
unit:mm 2018A
[2SC3142]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Fe.
2SC3142 - Kexin
SMD Type Transistors NPN Transistors 2SC3142 ■ Features ● Collector Current Capability IC=30mA ● Collector Emitter Vol.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3143 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC3143 |
Kexin |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC3144 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 4 | 2SC3144 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC3144 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC3145 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 7 | 2SC3146 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC3146 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC3147 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SC3147 |
HGSemi |
Silicon NPN POWER TRANSISTOR |
|
| 11 | 2SC3148 |
Toshiba Semiconductor |
NPN Transistor |
|
| 12 | 2SC3148 |
SavantIC |
SILICON POWER TRANSISTOR |
|
