·With TO-3PN package ·High breakdown voltage (VCBO 800V) ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·500V/4A Switching Regulator Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PARAM.
tor-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;RBE=B IC=1mA ;IE=0 IE=1mA ;IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.3A ; VCE=5V IC=1.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.3A ; VCE=10V 15 8 MIN 500 800 7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE -2 COB fT 2SC3088 TYP. MAX UNIT V V V.
Ordering number:EN1017B NPN Triple Diffused Planar Silicon Transistor 2SC3088 500V/4A Switching Regulator Applications .
·High Breakdown Voltage- : V(BR)CBO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot va.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3082K |
ROHM |
NPN Silicon Transistor | |
2 | 2SC3083 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
3 | 2SC3083 |
INCHANGE |
NPN Transistor | |
4 | 2SC3083 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC3085 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | 2SC3085 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
7 | 2SC3086 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
8 | 2SC3086 |
INCHANGE |
NPN Transistor | |
9 | 2SC3086 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC3087 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
11 | 2SC3087 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC3087 |
INCHANGE |
NPN Transistor |