·High Breakdown Voltage- : V(BR)CBO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collect.
r-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A ICBO Collector Cutoff Current VCB= 500V; IE=0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 0.3A; VCE= 5V hFE-2 DC Current Gain IC= 1.5A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0MHz fT Current-Gain—Bandwidth Product IC= 0.3A; VCE= 10V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 2A , I.
Ordering number:EN1010B NPN Triple Diffused Planar Silicon Transistor 2SC3086 500V/3A Switching Regulator Applications .
·With TO-220C package ·High breakdown voltage : VCBO=800V(Min) ·Fast switching speed. ·Wide area of safe operation APPLI.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3082K |
ROHM |
NPN Silicon Transistor | |
2 | 2SC3083 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
3 | 2SC3083 |
INCHANGE |
NPN Transistor | |
4 | 2SC3083 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC3085 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | 2SC3085 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
7 | 2SC3087 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
8 | 2SC3087 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SC3087 |
INCHANGE |
NPN Transistor | |
10 | 2SC3088 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
11 | 2SC3088 |
INCHANGE |
NPN Transistor | |
12 | 2SC3088 |
SavantIC |
SILICON POWER TRANSISTOR |