Ordering number:EN1011B NPN Triple Diffused Planar Silicon Transistor 2SC3087 500V/5A Switching Regulator Applications Features · High breakdown voltage (VCBO≥800V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3087] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at .
· High breakdown voltage (VCBO≥800V).
· Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm 2010C
[2SC3087]
Specifications
JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation
VCBO VCEO VEBO
IC ICP IB PC
PW≤300µs, Duty Cycle≤10% Tc=25˚C
800 500
7 5 10 2 1.75 50
Junction Temperature
Tj
150
Storage Temperature
Tstg
–55 to +150
.
·High Breakdown Voltage- : V(BR)CBO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot va.
·With TO-220C package ·High breakdown voltage : VCBO=800V(Min) ·Fast switching speed. ·Wide area of safe operation APPLI.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3082K |
ROHM |
NPN Silicon Transistor | |
2 | 2SC3083 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
3 | 2SC3083 |
INCHANGE |
NPN Transistor | |
4 | 2SC3083 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC3085 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | 2SC3085 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
7 | 2SC3086 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
8 | 2SC3086 |
INCHANGE |
NPN Transistor | |
9 | 2SC3086 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC3088 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
11 | 2SC3088 |
INCHANGE |
NPN Transistor | |
12 | 2SC3088 |
SavantIC |
SILICON POWER TRANSISTOR |