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·With TO-3 package ·High breakdown voltage APPLICATIONS ·High voltage power switching character display horizontal deflection output PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC3025 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Col.
tter saturation voltage Collector cut-off current CONDITIONS IC=10mA ;RBE=8 IE=10mA; IC=0 IC=5A; IB=1.25A IC=5A; IB=1.25A VCE=1500V; RBE=8 MIN 800 6 2SC3025 SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICES TYP. MAX UNIT V V 2.0 1.5 0.5 V V mA Switching times ts tf Storage time IC=5A; IB1=1A;IB2=-2.5A Fall time 0.5 µs 4.0 µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3025 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .
2SC3025 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max).
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3020 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 2 | 2SC3021 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 3 | 2SC3022 |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|
| 4 | 2SC3022 |
HGSemi |
HG RF POWER TRANSISTOR |
|
| 5 | 2SC3026 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC3026 |
SavantIC |
Silicon power Transistor |
|
| 7 | 2SC3000 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 8 | 2SC3001 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 9 | 2SC3006 |
Toshiba Semiconductor |
Silicon NPN epitaxial planer type Transistor |
|
| 10 | 2SC3007 |
Toshiba |
Silicon NPN Transistor |
|
| 11 | 2SC3011 |
Toshiba Semiconductor |
Silicon NPN epitaxial planer Transistor |
|
| 12 | 2SC3011 |
Kexin |
Silicon NPN Epitaxial Transistor |
|