HG Semiconductors 2sc2782HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector C urrent Collector Power.
entG ain Collector Output Capacitance
O utputP ow er P ow er G ain Collector Efficiency Series Equivalent Input Impedance
Series Equivalent Output Impedance
V(BR) CBO V(BR) CEO V (BR) EBO
hFE
Cbo
Po Gp Cη
IC = 20mA, IE = 0 IC = 50mA, IB = 0 IE = 1mA, IC = 0 VCE = 5V,IC = 10A
* V CB = 12.5V,IE = 0 f = 1MHz
(Fig.) V CC = 12.5V, f = 175MHz Pi = 18W
Zin V CC = 12.5V f = 175MHz, Po = 80W
Zout
36 — 16 —
4— 10 —
— — —
—
——
320
80 90 ―
6.4 6.8 ―
60 70 —
—
1.0 + 1.5
—
—
1.2 + 1.8
—
V V V
pF W dB %
* Pulse Test: Pulse Widt≤h 100µs, Duty Cycle≤3%
CAUTION
Beryllia Ceramics is used in th.
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Output Pow.
The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2780 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
2 | 2SC2780 |
TY Semiconductor |
Transistor | |
3 | 2SC2782A |
Toshiba Semiconductor |
Silicon NPN epitaxial planar type Transistor | |
4 | 2SC2783 |
Toshiba Semiconductor |
TRANSISTOR | |
5 | 2SC2783 |
HGSemi |
Silicon NPN POWER TRANSISTOR | |
6 | 2SC2784 |
NEC |
NPN SILICON TRANSISTOR | |
7 | 2SC2784 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor | |
8 | 2SC2785 |
NEC |
NPN SILICON TRANSISTOR | |
9 | 2SC2785 |
SEMTECH |
NPN Transistor | |
10 | 2SC2786 |
NEC |
NPN SILICON TRANSISTOR | |
11 | 2SC2786 |
SEMTECH |
NPN Transistor | |
12 | 2SC2786 |
WEJ |
NPN Transistor |