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2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE www.DataSheet4U.com 2SC2782A Unit in mm : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) VHF BAND POWER AMPLIFIER APPLICATIONS z Output Power ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collecto.
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). MARKING TOSHIBA JAPAN 2SC2782 Dot Lot No. 1 2007-11-01 2SC2782A ELECTRICAL CHARACTERISTICS (Tc = 25°C) www.DataSheet4U.com CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Output Capacitance Output Power Power Gain Collector Efficiency Series Equivalent Input Impedance Series Equivalent Output Impedance SYMBOL V (BR) CBO V (BR) CEO V (BR).
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2782 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC2782 |
ASI |
NPN SILICON RF POWER TRANSISTOR |
|
| 3 | 2SC2782 |
HGSemi |
Silicon NPN POWER TRANSISTOR |
|
| 4 | 2SC2780 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 5 | 2SC2780 |
TY Semiconductor |
Transistor |
|
| 6 | 2SC2783 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 7 | 2SC2783 |
HGSemi |
Silicon NPN POWER TRANSISTOR |
|
| 8 | 2SC2784 |
NEC |
NPN SILICON TRANSISTOR |
|
| 9 | 2SC2784 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor |
|
| 10 | 2SC2785 |
NEC |
NPN SILICON TRANSISTOR |
|
| 11 | 2SC2785 |
SEMTECH |
NPN Transistor |
|
| 12 | 2SC2786 |
NEC |
NPN SILICON TRANSISTOR |
|