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2SC2782 |
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| Part Number | 2SC2782 |
| Manufacturer | HGSemi |
| Description | HG Semiconductors 2sc2782HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, ... |
| Features |
entG ain Collector Output Capacitance
O utputP ow er P ow er G ain Collector Efficiency Series Equivalent Input Impedance
Series Equivalent Output Impedance
V(BR) CBO V(BR) CEO V (BR) EBO
hFE
Cbo
Po Gp Cη
IC = 20mA, IE = 0 IC = 50mA, IB = 0 IE = 1mA, IC = 0 VCE = 5V,IC = 10A * V CB = 12.5V,IE = 0 f = 1MHz
(Fig.) V CC = 12.5V, f = 175MHz Pi = 18W
Zin V CC = 12.5V f = 175MHz, Po = 80W
Zout
36 — 16 —
4— 10 —
— — —
—
——
320
80 90 ―
6.4 6.8 ―
60 70 —
—
1.0 + 1.5
—
—
1.2 + 1.8
—
V V V
pF W dB %
* Pulse Test: Pulse Widt≤h 100µs, Duty Cycle≤3%
CAUTION
Beryllia Ceramics is used in th... |
| Document |
 2SC2782 Data Sheet
PDF 684.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2780 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 2 | 2SC2780 |
TY Semiconductor |
Transistor |
|
| 3 | 2SC2782 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC2782 |
ASI |
NPN SILICON RF POWER TRANSISTOR |
|
| 5 | 2SC2782A |
Toshiba Semiconductor |
Silicon NPN epitaxial planar type Transistor |
|