2SC2528 - Inchange Semiconductor

2SC2528 Silicon NPN Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 0.7A ·Complement to Type 2SA1078 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifier, Audio power amplifier Dirvers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S.

Features

IC= 1mA ; IB= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.7A; IB= 0.07A 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.7A ; VCE= 5V 1.7 V ICBO Collector Cutoff Current VCB= 120V ; IE= 0 1 μA IEBO Emitter Cutoff Current VEB= 6V ; IC= 0 1 μA hFE-1 DC Current Gain IC= 0.3A ; VCE= 5V 60 350 hFE-2 DC Current Gain IC= 0.7A ; VCE= 5V 50 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V;ftest= 10MHz 60 MHz COB Output Capacitance IE= 0; VCB= 20V;ftest= 1.0MHz 60 pF Notice： ISC reserves.