Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SA1072 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifier ·Audio power amplifiers ·Switching regulators ·DC-DC converters ABSOLUTE MAXIMUM RATING.
V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V ICBO Collector Cutoff Current VCB= 120V ; IE= 0 ICEO Collector Cutoff Current VCE= 120V ;RBE= ∞ IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 7A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V; f= 10MHz Switching Times tr .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2523 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC2523 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC2525 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC2525 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC2526 |
Fujitsu Media Devices Limited |
SILICON HIGH SPEED POWER TRANSISTOR |
|
| 6 | 2SC2526 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | 2SC2527 |
Fujitsu Media Devices |
SILICON HIGH SPEED POWER TRANSISTOR |
|
| 8 | 2SC2527 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC2527 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC2528 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 11 | 2SC2528 |
Fujitsu |
SILICON HIGH SPEED POWER TRANSISTOR |
|
| 12 | 2SC2500 |
Toshiba Semiconductor |
TRANSISTOR |
|