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·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120.
e IC= 100mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5 A VBE Base-Emitter Voltage IC= 5A; VCE= 5V ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC=0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 7A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V MIN TYP. MAX UNIT 120 V 7 V 1.8 V 1.7 V 10 μA 10 μA 60 200 40 300 pF 80 MHz NOTICE： ISC reserves the rights.
2SC2525 - SavantIC
·With MT-200 package ·Complement to type 2SA1075 ·Excellent safe operating area ·Ultra fast switching speed APPLICATIONS.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2522 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2SC2523 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC2523 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC2526 |
Fujitsu Media Devices Limited |
SILICON HIGH SPEED POWER TRANSISTOR |
|
| 5 | 2SC2526 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | 2SC2527 |
Fujitsu Media Devices |
SILICON HIGH SPEED POWER TRANSISTOR |
|
| 7 | 2SC2527 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC2527 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SC2528 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | 2SC2528 |
Fujitsu |
SILICON HIGH SPEED POWER TRANSISTOR |
|
| 11 | 2SC2500 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 12 | 2SC2500 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|