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2SC2463 Silicon NPN Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2463 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO .
E D DD 250 to 500 E DE 400 to 800 V(BR)EBO I CBO I EBO hFE
*
250 — — F DF
VCE(sat) VBE
V V
I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA
1. The 2SC2463 is grouped by h FE as follows.
600 to 1200
See characteristic curves of 2SC1345.
2
2SC2463
Maximum Collector Dissipation Curve 150 Collector Power Dissipation PC (mW)
100
50
0
50 100 Ambient Temperature Ta (°C)
150
3
Unit: mm
0.65
0.10 3
– 0.4 +
– 0.05
0.16
– 0.06
+ 0.10
1.5 ± 0.15
+ 0.2
– 0.6
0
– 0.1
0.95
0.95
1.9 ± 0.2 2.95 ± 0.2
0.3
+ 0.2 1.1
– 0.1
0.65
2.8
Hitachi Code JEDEC EIAJ Weight (reference value)
MPAK — .
2SC2463 - Renesas
2SC2463 Silicon NPN Epitaxial REJ03G0698-0200 (Previous ADE-208-1064) Rev.2.00 Aug.10.2005 Application Low frequency am.
2SC2463 - Kexin
SMD Type Silicon NPN Epitaxial 2SC2463 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 +0.1 1..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2460 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC2460 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC2461 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC2461A |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC2462 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC2462 |
Renesas |
Silicon NPN Epitaxial Transistor |
|
| 7 | 2SC2462 |
Kexin |
Silicon NPN Epitaxial Transistor |
|
| 8 | 2SC2464 |
ETC |
Silicon NPN Epitaxial Transistor |
|
| 9 | 2SC2466 |
ETC |
Silicon NPN Epitaxial Transistor |
|
| 10 | 2SC2468 |
ETC |
Silicon NPN Epitaxial Transistor |
|
| 11 | 2SC2469 |
ETC |
Silicon NPN Epitaxial Transistor |
|
| 12 | 2SC2404 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|