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2SC2462 Silicon NPN Epitaxial REJ03G0697-0200 (Previous ADE-208-1063) Rev.2.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collect.
tage VBE Note: 1. The 2SC2462 is grouped by hFE as follows. Grade B C D Mark LB LC LD hFE 100 to 200 160 to 320 250 to 500 Min 50 40 5 — — 100 — — Typ — — — — — — — — Max — — — 0.5 0.5 500 0.2 0.75 Unit V V V µA µA V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 30 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA Rev.2.00 Aug 10, 2005 page 2 of 6 Free Datasheet http://www.datasheet4u.com/ 2SC2462 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 10 Typical Output .
2SC2462 - Kexin
SMD Type Silicon NPN Epitaxial 2SC2462 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1.
2SC2462 - Hitachi Semiconductor
2SC2462 Silicon NPN Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2460 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC2460 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC2461 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC2461A |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC2463 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC2463 |
Renesas |
Silicon NPN Epitaxial Transistor |
|
| 7 | 2SC2463 |
Kexin |
Silicon NPN Epitaxial Transistor |
|
| 8 | 2SC2464 |
ETC |
Silicon NPN Epitaxial Transistor |
|
| 9 | 2SC2466 |
ETC |
Silicon NPN Epitaxial Transistor |
|
| 10 | 2SC2468 |
ETC |
Silicon NPN Epitaxial Transistor |
|
| 11 | 2SC2469 |
ETC |
Silicon NPN Epitaxial Transistor |
|
| 12 | 2SC2404 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|