·With TO-3 Package ·Complementary to 2SA1051A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Recommended for 10W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160.
itter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 5A ; VCE= 5V VCB=160V;IB= 0 VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 5A ; VCE= 5V MIN MAX UNIT 2.0 V 2.0 V 50 uA 10 uA 55 240 40 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electro.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2461 |
INCHANGE |
NPN Transistor | |
2 | 2SC2460 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC2460 |
INCHANGE |
NPN Transistor | |
4 | 2SC2462 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
5 | 2SC2462 |
Renesas |
Silicon NPN Epitaxial Transistor | |
6 | 2SC2462 |
Kexin |
Silicon NPN Epitaxial Transistor | |
7 | 2SC2463 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
8 | 2SC2463 |
Renesas |
Silicon NPN Epitaxial Transistor | |
9 | 2SC2463 |
Kexin |
Silicon NPN Epitaxial Transistor | |
10 | 2SC2464 |
ETC |
Silicon NPN Epitaxial Transistor | |
11 | 2SC2466 |
ETC |
Silicon NPN Epitaxial Transistor | |
12 | 2SC2468 |
ETC |
Silicon NPN Epitaxial Transistor |